LAI Zhen|quan1, LI Xin|xi1, YU Jin1, WANG Gen|shui2,GUO Shao|ling2, CHU Jun|hao2(1.Department of Physics, Nanchang University, Nanchang 330047,China; 2.National Lab for Infrared Physics, Chinese Academic of Sciences, Shanghai 200083,China)
Abstract：Pb(Zr0.52Ti0.48)O3 (PZT) ferroelectric thin films were grown on Ti buffered Pt(111) thin film bottom electrode by RF magnetron sputtering method at low substrate temperature (370 ℃), followed by a rapid thermal annealing (RTA) process with
2003, Vol. 27 