WANG Zhen-dong~(1,2),LAI Zhen-quan~1,FAN Ding-huan~1,ZHANG Jing-ji~2HUANG Zhi-ming~3(1.Department of Physics,Nanchang University,Nanchang 330047,China;2.College of Material Science and Engineering,Nanchang University,Nanchang 330047,China;3.National Lab
摘要用磁控溅射法在S i(111)基片上以不同溅射功率沉积LaN iO3(LNO)薄膜,基片温度370℃,对沉积的薄膜样品进行快速热退火处理(500℃,10 m in)。使用电感耦合等离子体原子发射光谱(ICP-AES)精确测量不同溅射功率沉积的LNO薄膜退火前后的组分情况。分析发现:LNO薄膜经退火处理后,其中
Abstract：LaNiO3（LNO） thin films were deposited on Si（111） substrates by RF-magnetron sputtering with different power at low substrate temperature（Tsub=370 ℃）,sequentially followed by a rapid thermal annealing（RTA） process at 500 ℃ for 10 minutes.The comp
2005, Vol. 29 